• E. Arenholz, G. van der Laan, Y. Takamura, F. Yang, N. Kemik, M.D. Biegalski, H.M. Christen, “Magnetic structure of La_0.7Sr_0.3MnO₃/ La_0.7Sr_0.3FeO₃ superlattices”, Appl. Phys. Lett., 94, 072503, (2009)

• Y. Takamura, R.V. Chopdekar, E. Arenholz, and Y. Suzuki, “Control of the Magnetic and Magnetotransport Properties of La_0.67Sr_0.33MnO₃ Thin Films Through Epitaxial Strain” Appl. Phys. Lett., 92, 162504 (2008)

• J.S. Bettinger, R.V. Chopdekar, M. Liberati, J.R. Neulinger, M. Chshiev, Y. Takamura, L.M.B Alldredge, E. Arenholz, Y.U. Idzerda, A.M. Stacy, W.H. Butler, Y. Suzuki, “Magnetism and Transport of CuCr₂Se₄ Thin Films” J. Magn. Magn. Mater. 318, 65-73 (2007)

• Y. Takamura, R.V. Chopdekar, Y. Suzuki, A. Scholl, A. Doran, J.A. Liddle, and B. Harteneck, “Tuning Magnetic Domain Structure in Nanoscale La_0.7Sr_0.3MnO₃ Islands” Nano Letters, 6, 1287, (2006).

• Y. Takamura, R.V. Chopdekar, J.K. Grepstad, A.F. Marshall, A. Vailionis, H. Zheng, J.F. Mitchell, and Y. Suzuki, “Thickness Dependent Properties of (110)-Oriented La_1.2Sr_1.8Mn₂O₇ Thin Films”, J. Appl. Phys. Special Issue for the 50th Magnetism and Magnetic Materials Conference, 99, 08S902, (2006), Presented at the 50th Magnetism and Magnetic Materials Conference, Nov. 2005, San Jose, CA.

• R.V. Chopdekar, Y. Takamura, and Y. Suzuki, “Disorder-induced carrier localization in ultrathin strained SrRuO₃ epitaxial films”, J. Appl. Phys. Special Issue for the 50th Magnetism and Magnetic Materials Conference, 99, 08F503, (2006), Presented at the 50th Magnetism and Magnetic Materials Conference, Nov. 2005, San Jose, CA.

• H. Schut, S.W.H. Eijt, C.D. Beling, K. Ho, and Y. Takamura, “Positron annihilation studies of high dose Sb implanted silicon”, Mater. Sci. and Eng. B, 124-125, 283 (2005), Presented at the European Materials Research Society 2005 Spring Meeting, June 2005, Strasbourg, France.

• Y. Takamura, R.V. Chopdekar, J.K. Grepstad, A.F. Marshall, H. Zheng, J.F. Mitchell, and Y. Suzuki, “Structural, Magnetic and Electronic Properties of (110)-Oriented Epitaxial Thin Films of the Bilayer Manganite La_1.2Sr_1.8Mn₂O₇”, Appl. Phys. Lett. 87, 142508 (2005).

• J.K. Grepstad, Y. Takamura, A. Scholl, I. Hole, Y. Suzuki, and T. Tybell, “Effects of thermal annealing in oxygen on the antiferromagnetic order and domain structure of epitaxial LaFeO₃ thin films”, Thin Solid Films, 486, 108 (2005), Presented at the 11th International Workshop on Oxide Electronics, Oct. 2004, Kanagawa, Japan.

• Y. Takamura, A.F. Marshall, A. Mehta, J. Arthur, P.B. Griffin, J.D. Plummer and J.R. Patel, “Diffuse x-ray scattering and transmission electron microscopy study of defects in antimony-implanted silicon”, J. Appl. Phys., 95, 3968 (2004).

• M. Aboy, L. Pelaz, L.A. Marques, Juan Barbolla, A. Mokhberi, Y. Takamura, P.B. Griffin, and J.D. Plummer, “Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles”, Appl. Phys. Lett., 83, 4166 (2003).
• M. Aboy, L. Pelaz, L.A. Marques, J. Barbolla, A. Mokhberi, Y. Takamura, P.B. Griffin, J.D. Plummer, “Atomistic modeling of B activation and deactiviation for ultra-shallow junction formation”, Proceedings of the IEEE International Conference on Simulations of Semiconductor Processes and Devices (SISPAD) 2003, 151, (2003).

• J.-S. Goo, Q. Xiang, Y. Takamura, H. Wang, J. Pan, F. Arasnia, E.N. Paton, P. Besser, M.V. Sidorov, E. Adem, A. Lochtefeld, G. Braithwaite, M.T. Currie, R. Hammond, M.T. Bulsara, and M.L. Lin, “Scalability of strained-Si nMOSFETs down to 25 nm gate length”, IEEE Elect. Dev. Lett., 24, 351 (2003).

• J.-S. Goo, Q. Xiang, Y. Takamura, F. Arasnia, E.N. Paton, P. Besser, J. Pan, and M.R. Lin, “Band offset induced threshold variation in strained-Si nMOSFETs,” IEEE Elect. Dev. Lett., 24, 568 (2003).

• M.A. Sahiner, S.W. Novak, J.C. Woicik, Y. Takamura, P.B. Griffin, J.D. Plummer, “The Local Structure of Antimony in High Dose Antimony Implants in Silicon by XAFS and SIMS”, Mat. Res. Soc. Symp. Proc, 717, C3.6.1 (2002).

• Y. Takamura, A. Vailionis, A.F. Marshall, P.B. Griffin, and J.D. Plummer, “Dopant deactivation in heavily Sb doped Si (001): A high resolution x-ray diffraction and transmission electron microscopy study”, J. Appl. Phys., 92, 5503 (2002), Presented at the 2002 Materials Research Society Spring Meeting, April 2002, San Francisco, CA.

• Y. Takamura, E-H. Kim, S.H. Jain, P.B. Griffin, J.D. Plummer, “The Use of Laser Annealing to Reduce Parasitic Series Resistances in MOS Devices”, Proceedings of the IEEE 2002 Conference on Ion Implantation Technology, 56 (2002).

• Y. Takamura, P.B. Griffin, and J.D. Plummer, “Physical processes associated with the deactivation of laser annealed dopants in silicon”, J. Appl. Phys., 92, 235 (2002).

• Y. Takamura, S. Jain, P.B. Griffin, and J.D. Plummer, “Thermal stability of laser annealed dopants in silicon”, J. Appl. Phys., 92, 230 (2002).

• Y. Takamura, S. Jain, P.B. Griffin, J.D. Plummer, “A Study of the Deactivation of High Concentration, Laser Annealed Dopant Profiles in Silicon”, Mat. Res. Soc. Symp., 669, J7.3.1 (2001).